#SVT中转周边[超话]#
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BJT collector (C), emitter (E)(含箭头), and a base (B) ; NPN and PNP (二个 diode)

MOSFET: source (S), drain (D), and gate (G)
MOS (metal-oxide semiconductor): PMOS和NMOS的源漏方位相反，NMOS的漏端drain在上面，PMOS的源端source在上面

NMOS (negative 开) 的导通条件是当栅极和源极之间的电压（Vgs）大于或等于阈值电压（Vth, threshold）时。

PMOS (positive 开) 的导通条件是当栅极和源极之间的电压（Vgs）小于或等于阈值电压（Vth）时。

VDD (Drain) , VSS (Source); VCC (Collector), VEE (Emitter)

MOSFET的导通电阻 (RDSon; RDS on)

Each input/output buffer has a PMOS and NMOS transistor and a NOT gate. These two transistors are connected in such a way that their Gate and Drain pins are shorted as shown below.

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